MRFE6S9125NR1【PDF 1/18 页】MOSFET RF N-CH 27W TO-270-4

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MRFE6S9125NR1 MRFE6S9125NBR1

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1000 MHz. The high gain and broadband performance of these de-

vices make them ideal for large-signal, common-source amplifier applications

in 28 volt base station equipment.

N-CDMA Application

Typical Single-Carrier N-CDMA Performance @ 880 MHz, V

= 28 Volts,

IDQ

= 950 mA, P

out

= 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic

Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @

0.01% Probability on CCDF.

Power Gain ? 20.2 dB

Drain Efficiency ? 31%

ACPR @ 750 kHz Offset = -45.7 dBc in 30 kHz Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

GSM EDGE Application

Typical GSM EDGE Performance: VDD

= 28 Volts, I

= 700 mA,

Pout

= 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)

Power Gain ? 20 dB

Drain Efficiency ? 40%

Spectral Regrowth @ 400 kHz Offset = -63 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM ? 1.8% rms

GSM Application

Typical GSM Performance: VDD

= 28 Volts, I

= 700 mA, P

out

125 Watts, Full Frequency Band (920-960 MHz)

Power Gain ? 19 dB

Drain Efficiency ? 62%

Features

Characterized with Series Equivalent Large-Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-0.5, +66

Vdc

Gate-Source Voltage

VGS

-0.5, +12

Vdc

Maximum Operation Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 125 W CW

Case Temperature 76°C, 27 W CW

RθJC

0.44

0.45

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators

by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRFE6S9125N

Rev. 0, 10/2007

Freescale Semiconductor

Technical Data

880 MHz, 27 W AVG., 28 V

SINGLE N-CDMA, GSM EDGE

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 1486-03, STYLE 1

TO-270 WB-4

PLASTIC

MRF6S9125NR1

CASE 1484-04, STYLE 1

TO-272 WB-4

PLASTIC

MRF6S9125NBR1

MRFE6S9125NR1

MRFE6S9125NBR1

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